| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate, which can reduce a region, where ions can not be implanted by an oblique ion implantation method because the shadow of a block layer falls on the region, and can improve the integration rate of a semiconductor chip. SOLUTION: This method of manufacturing a semiconductor substrate includes a step in which a gate electrode pattern 12 is formed on a semiconductor substrate 11, a step in which a photoresist film 13 is formed on the semiconductor substrate 11 and the electrode pattern 12, a step in which the thickness of the photoresist film 13 is reduced to have the height of the surface of the photoresist film 13 equal to the height of the surface of the electrode pattern 12, a step in which the photoresist film 13 is patterned, and a step in which impurity ions are implanted into the semiconductor substrate 11 on which the electrode pattern 12 and the photoresist film 13 are formed in a direction inclined from a direction vertical to the surface of the semiconductor substrate 11 by a prescribed angle.
|
