ANODE FORMATION SYSTEM, METHOD FOR FORMING POROUS LAYER USING IT AND METHOD FOR PRODUCING THIN SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To provide an anode formation system in which current density distribution can be made uniform by controlling the magnitude or distribution of leak current and a porous layer can be formed uniformly over the entire surface of a substrate. SOLUTION: A silicon substrate S is set in an anode formation system 10 by inserting a member 15 holding the silicon substrate S into a guide groove 16 provided in an electrolytic solution tank 11. A first groove G1 formed between the silicon substrate S and the substrate holding member 15 and a second groove G2 formed between the substrate holding member 15 and the inner wall face 16W of the guide groove 16 and uniform. Resistances of the first groove G1 and the second groove G2 are set higher than the resistance of the silicon substrate S. The substrate holding member 15 holds the silicon substrate S while securing it between the stop part 31 of a first cassette 21 and the annular stop member 41 of a second cassette 22.