METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a selectively growing step of growing an epitaxially grown layer by the selective growth method can be performed without interfering with the succeeding step at the time of manufacturing a semiconductor device. SOLUTION: In this method of manufacturing a semiconductor device, a compound semiconductor layer is selectively grown in an epitaxially growing area 10b exposed from a mask 20. Then polycrystalline grains 28 deposited on the mask 20 are converted into polycrystalline oxide grains 30 by oxidizing the grains 28. Subsequently, the polycrystalline oxide grains 30 and mask 20 are removed from a non-growing area 10a by etching.