PROCESS FOR SELECTIVE EPITAXIAL GROWTH AND BIPOLAR TRANSISTOR PREPARED BY USING SUCH PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a selective epitaxial growth having a sufficient growth speed allowable in manufacturing conditions and a bipolar transistor manufacture by using the process. SOLUTION: This relates to the process for the selective epitaxial growth of an Si containing layer (8) on a substrate (1). The substrate (1) is provided with a layer (4) of silicon oxynitride with an atomic concentration of oxygen between 30% and 45%, and an atomic concentration of nitrogen between 19% and 35% before the selective epitaxial growth of the Si containing layer (8).