| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, when each GaN-based semiconductor element is separated from a substrate by etching or dicing in a GaN-based semiconductor element manufacturing process, a great quantity of labor is required and damages are given to the separated surface of each element and the manufacture of a little damaged resonant surface is difficult without increasing the number of manufacturing steps in, particularly, a semiconductor laser element manufacturing process. SOLUTION: In a method of manufacturing semiconductor laser element, each semiconductor laser element is separated from the substrate by laser abration and, at the same time, a flat resonant surface having few damages on a crystal face can be formed at the end section of the element. In addition, a high-quality resonant surface can be formed easily without increasing the number of manufacturing steps. Moreover, the method is effective not only to the method of manufacturing semiconductor laser element, but also to the methods of manufacturing other elements.
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