| 摘要 |
PROBLEM TO BE SOLVED: To constitute a semiconductor integrated circuit capable of reducing contact resistant of a resistant element and a wiring layer using a cermet based material and assembling an accurate minute thin film high resistant element or the like of a stable resistant value. SOLUTION: A semiconductor device is provided with a semiconductor substrate 11, an SiO2 film 12 provided on the semiconductor substrate 11, a thin film resistant layer 13 provided on the whole face or a part of the SiO2 film 12, and the wiring layer 17 formed selectively on a thin film resistant layer 13. The thin film resistant layer 13 has a resistant element area A used as a resistant element R1 and wiring connection areas B1, B2 connecting the resistant element R1 and the wiring layer 17. The wiring connection areas B1, B2 include the whole formation area of the wiring layer 17 on a thin film resistant layer except for the resistant element area A. Since contact resistance r of the resistant element R1 and the wiring layer 17 can be suppressed very low, influence of the contact resistance r can be excluded from the resistant value of the high resistant element R1.
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