发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a state before cut off can be held for some period even after the cut off of a power source without using a non-volatile memory, a leak current is reduced, and power consumption is reduced. SOLUTION: Before a power source is cut off, a switch 5 is turned on and a switch 6 is tuned off by control voltage of a first control input terminal 7. Next, switches 9, 10 are turned on by control voltage of a second control input terminal 13, a first capacitor 8 stores a state of a feedback loop, while a second capacitor 12 is charged. After a power source is cut off, when a power source is applied again before discharge of the capacitors 8, 12, a state of the feedback loop is made a state before the cut off of a power source by the first capacitor 8. At the time, a switch 11 is turned off by the second capacitor 12, and input data from a data input terminal 3 is cut off. Next, the switches 9, 11 are turned off and the switch 11 is turned on by the second control input terminal 13.
申请公布号 JP2003045185(A) 申请公布日期 2003.02.14
申请号 JP20010229072 申请日期 2001.07.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUKATSU HAJIME
分类号 G11C11/41;H03K17/00;(IPC1-7):G11C11/41 主分类号 G11C11/41
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