| 摘要 |
PROBLEM TO BE SOLVED: To improve wiring density by setting a grid interval narrow while satisfying a condition of a suitable opening pitch regulated by a design routine. SOLUTION: A semiconductor device designed by arranging a plurality of cells is provided with a semiconductor substrate 1, a transistor formed in the semiconductor substrate 1, a first wiring pattern 100 and a second wiring pattern 200 arranged on a first cell and a second cell adjacent to an X direction in a wiring layer laminated on the semiconductor substrate respectively and having a part extending in parallel in a Y direction, and an interlayer insulating film forming an opening corresponding to a first wiring pattern position 11 or 12 and a second wiring pattern position 22 or 21 in the interlayer insulating film formed as the lower layer of a wiring layer. |
