| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method by improving the problem of a conventional dual metal gate process and improving characteristic and reliability of an element. SOLUTION: In the semiconductor device having an n type MIS transistor and a p type transistor, a gate electrode of one transistor of the n type and p type MIS transistors includes a first gate material film 21 formed on a gate insulating film 20, a second gate material film 22 formed on the first gate material film and a third gate material film 24 formed on the second gate material film. A gate electrode of the other transistor of the n type and p type MIS transistors includes the third gate material film 24 formed on the gate insulating film 20, and the first gate material film 21 is a metal film containing atimony, bismuth, indium, lead, tin or tellurium or a metal compound film containing their elements.
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