| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an abrasive and a method of polishing a substrate, which can efficiently perform removal of an excessively formed film layer and planarization of a silicon oxide film and an embedded film of a metal or the like with high-level quality and with easy process control in a recess CMP technology such as for shallow trench isolation formation and for embedded metal wiring formation and in a planarization CMP technology for an interlayer insulation layer. SOLUTION: A substrate is polished with an abrasive containing abrasive grains and an additive that gives an inflection point in the polishing pressure dependence of the polishing rate, wherein the concentration of the additive in the abrasive slurry is adjusted to satisfy the relation P2>P'>P>P1, where P is the set polishing pressure, P1 is the effective polishing pressure for recessed parts of the substrate on which a pattern is formed, P2 is the effective polishing pressure for protruding parts, and P' is the pressure at which the inflection point appears in the polishing rate for a substrate on which no pattern is formed. Or, by setting the polishing weight so as to satisfy the relation P2>P'>P>P1, it is possible to realize a polishing characteristic in which the polishing is selectively progressed at the protruding parts to which a higher polishing pressure than the pressure at which the inflection point appears according to the pattern shape of the film to be polished is applied.</p> |
