PLASMA ETCHING CHAMBER AND METHOD FOR PRODUCING PHOTOMASK USING IT

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching chamber of a plasma etching system used in an etching system for producing a photomask, and a method for producing a photomask using it. SOLUTION: The plasma etching chamber comprises an electrode having a surface for supporting a photomask substrate and an end face surrounding the supporting surface on the periphery thereof, a heat transmitting member provided along the circumferential edge part of the supporting surface, and a heater for supplying heat to the heat transmitting member. In the method for producing a photomask, a light shading film is formed on a transparent substrate. A resist film pattern for exposing a part of the light shading film is formed on the light shading film. Under a state where the temperature at at least a part of the circumferential edge part of the transparent substrate is sustained higher than the temperature in the central part of the transparent substrate, the light shading film is etched by a plasma etching method using the resist film pattern as an etching mask thus forming a light shading film pattern.