| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device that removes the resist easily after ion implantation by solving the problem that kinetic energy in ion collision is converted to heat for heating a substrate and formed objects on the substrate, since ions are accelerated by a high electric field for implanting into the substrate in the ion implantation, and a resist surface is deteriorated and cured by heating at high temperature substantially. SOLUTION: The method should include a process for removing a resist mask after a process for injecting ions of a rare gas element. In addition, as other methods, the method should include a first process for injecting the ions of an impurity element where conductivity is given, a second process for injecting the ions of the rare gas element, and a process for removing the resist mask after the first and second processes.</p> |
