MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To contrive improvement of hot electron resistance of a device without lowering a degree of integration. SOLUTION: In the manufacturing method of a semiconductor integrated circuit device having two MISFETs in which each gate electrode is arranged on the main face of a semiconductor substrate in parallel at prescribed intervals in one direction, after the gate electrode of each MISFET is formed on the main face of the semiconductor substrate, channel impurities are ion-injected on the main face of the semiconductor substrate at an angle making an acute angle to the main face of the semiconductor substrate from a first side face side out of a first side face and a second side face mutually opposing the gate electrode in one direction to have a process forming a galactic halo layer.