发明名称 METHOD FOR MEASURING VI CHARACTERISTICS OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To resolve a problem where, whenever a cell arrangement pattern changes, a pattern recognition with the use of a program corresponding to it becomes necessary, and a test time is also prolonged in proportion to the number of cells in a conventional measuring method that the relationship between an applied voltage V and a current I is measured by making a probe contact the surface of a semiconductor wafer. SOLUTION: The semiconductor wafer is set at a prescribed position on a table, and the roller-shaped probe having a conductive periphery, with the length to cover the region where the cells are arranged, is made to come into contact with a plurality of cells, and then a combined current is measured.
申请公布号 JP2003045923(A) 申请公布日期 2003.02.14
申请号 JP20010229483 申请日期 2001.07.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAGUCHI KAZUNORI;YAMAGUCHI YOSHIHIRO
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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