| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory module in which it is suppressed that a plurality of DRAMs enter simultaneously into a refresh-mode and a large peak current flows and stable operation can be performed. SOLUTION: In the semiconductor memory module, on which a plurality of dynamic type semiconductor memories (DRAM-1 to 8) are mounted, when it is detected that an input command is a refresh-command (REF=H) based on external control signals (Ext./RAS, /CAS, /WE) for executing a command externally inputted to a register buffer (9), internal control signals for one part of semiconductor memories (DRAM-5 to 8) previously selected out of a plurality of dynamic type semiconductor memories (DRAM-5 to 8) are delayed (Int. /RAS', /CAS', /WE), time difference is introduced to execution timing of the refresh-command.
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