SUBSTRATE PROCESSING SYSTEM

摘要

PURPOSE: To use gas supplied into a reaction tube efficiently by improving the shape of a gas nozzle. CONSTITUTION: A tubular reaction tube 12 is installed vertically and the opening on a end flange 13 is sealed hermetically with a seal cap 14 and then a boat 15 mounting substrates, i.e., wafers W, in multistage is inserted into the reaction tube 12. Subsequently, gas is supplied from a nozzle 21 to the plurality of wafers W in the reaction tube 12 thus depositing a thin film on the wafers W. The nozzle 21 is provided to creep along the inner wall 22 of the reaction tube 12 in the axial direction thereof. The nozzle 21 has an inner space 23 spreading over an angle of 45°-180° in the inner circumferential direction of the tube. The nozzle 21 is provided with a plurality of gas ejection openings 24 in correspondence with respective wafers W and supplies gas above respective wafers W.