| 摘要 |
PURPOSE: A semiconductor device and a method for fabricating the same are provided to reduce a bubble defect of a gate electrode structure by removing a GPOX(Gate Poly OXide) layer or preventing the formation of the GPOX layer. CONSTITUTION: A gate electrode structure(110) is formed on an upper surface of a semiconductor substrate(100). The gate electrode structure(110) is formed with a gate insulating layer, a doped polysilicon layer, a metal silicide layer, and a capping insulating layer, and a spacer. A GPOX layer is formed on the surface of the semiconductor substrate(100) including the gate electrode structure(110). A cleaning process is performed on the surface of the semiconductor substrate(100). An etch stopper(140) is formed on the gate electrode structure(110) and the semiconductor substrate(100). An HDP(High Density Plasma) oxide layer(150) is deposited on the etch stopper(150). The GPOX layer is removed by performing the cleaning process.
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