| 摘要 |
PURPOSE: A NAND-type flash memory device having a shared selection line structure is provided to have a shared selection line structure and to reduce an occupied area of a butting contact of string and ground selection transistors. CONSTITUTION: Each of the first and second memory blocks(BLK(k+1),BLK(k)) comprises a plurality of cell strings respectively connected to corresponding bit lines. Each of the cell strings is comprised of a string selection transistor(SST) connected to a corresponding bit line, a ground selection transistor(GST) connected to a common source line(CSL), and a plurality of memory cells(MC0-MC15) connected in series between the string and ground selection transistors. The string selection transistor of each cell string is connected to a string selection line(SSL(k)), the ground selection transistor thereof is connected to a ground selection line(GSL(k)), and the memory cells thereof are connected to corresponding word lines(WL0(k)-WL15(k)), respectively. The string/ground selection line of the first memory block is electrically connected to the ground/string selection line of the second memory block so as to share a butting contact.
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