发明名称 PRODUCTION METHOD FOR SOI WAFER AND WAFER SEPARATION TOOL
摘要 PROBLEM TO BE SOLVED: To provide a method for producing an SOI wafer without flaws on the surface of the wafer and a wafer separating tool usable for that method. SOLUTION: In the production process of the SOI wafer by a smart-cut method, a laminate 34 between an SOI wafer 39 and a remaining wafer 38 is separated into individual wafers, by using a wafer separation tool 1. The wafer separation tool 1 is provided with a support face 1p for supporting the laminate 34 in the thickness direction and a step part 2 on the support face 1p regulated in the height for blocking sliding and moving of the downside wafer on the laminate 34 and for allowing sliding and moving of the upside wafer relative to the downside wafer. The laminate 34 is placed on the support face 1p and inclined, the upside wafer is slid and moved by dead weight relatively to the downside wafer in the in-plane direction, and both the wafers are made to mutually separate. According to such a method, mutual rubbing of wafers can be suppressed and no flaws are produced on the surface of the wafer.
申请公布号 JP2003046070(A) 申请公布日期 2003.02.14
申请号 JP20010231043 申请日期 2001.07.31
申请人 SHIN ETSU HANDOTAI CO LTD;NAGANO DENSHI KOGYO KK 发明人 AGA KOJI;TAKAHASHI HIROYUKI;MITANI KIYOSHI
分类号 H01L21/677;H01L21/00;H01L21/02;H01L21/30;H01L21/68;H01L21/762;H01L27/12;(IPC1-7):H01L27/12 主分类号 H01L21/677
代理机构 代理人
主权项
地址