SIMIS-TYPE TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an SIMIS-type transistor and its manufacturing method having very simplified manufacturing processes and a structure producible at a low cost. SOLUTION: PROM transistor is composed of a floating electrode 3, provided on the surface of a semiconductor substrate (first semiconductor layer) 1 via a first insulation layer 2 and a control gate electrode (second semiconductor layer) 5 made of, e.g. a conductive polysilicon film on the floating gate electrode 3 via a second insulation layer 4. The floating gate 3 is made of a conductive metal oxide, e.g. ruthenium oxide and the first and second insulation layers 2, 4 are respectively made of compounds of the semiconductor substrate 1 or the polysilicon film (second semiconductor layer), constituting the control gate electrode 5 with oxygen dissociated from a metal oxide.