| 摘要 |
The film quality of a metal film formed by CVD is enhanced, such as a Ru film configuring a lower electrode of an information storage capacitor. A WN film serving as an adhesive layer is deposited by sputtering over the sidewalls and bottom surface of a hole in a silicon oxide film where the information storage capacitor is formed. A Ru film to be a lower electrode for the information storage capacitor is formed above the WN film by CVD using Ru(HFAC)3, H2O and H2 as ingredients so that a ratio of partial pressure of H2O to H2 among the ingredients is controlled to be in the area below a graph (a). In this manner, when the Ru film is formed by CVD utilizing hydrolysis, the film quality of the Ru film can be enhanced. Additionally, the ratio of partial pressure of H2O to H2 is controlled, whereby the oxidation of the Ru film can be suppressed. Furthermore, when it is controlled to be in the area below a graph (b) to form the Ru film, the oxidation of the WN film can be suppressed.
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