| 摘要 |
A phtolithography mask for use with extreme ultraviolet lithography (EUVL) irradiation is disclosed. The mask comprises a multilayer stack that is substantially reflective of said EUV irradiation, a supplemental multilayer stack formed atop the multilayer stack, and an absorber material formed in trenches patterned into the supplemental multilayer stack. The absorber material being substantially absorptive EUV irradiation. |
