| 摘要 |
There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer provided on the surface of the semiconductor substrate, a bump formed on a surface of the electrode pad through an intermediate layer, and a resin insulating film formed in at least a peripheral portion of the bump to cover an interface of the bump and the intermediate layer which is exposed to a side surface of the bump. |
