发明名称 HIGH FREQUENCY ION PLATING VAPOR DEPOSITION SYSTEM
摘要 <p>A high frequency ion plating vapor deposition system for applying vapor deposition to a vapor deposition substrate (15) in a vacuum belljar (13), comprising a vapor deposition substrate dome (17) for supporting the vapor deposition substrate (15), one or more vapor deposition source (19) disposed oppositely to the vapor deposition substrate dome (17), a first high frequency ring (23) disposed approximately directly above each vapor deposition source (19) and having opposite end parts connected with a first high frequency power supply (21), and a second high frequency ring (27) disposed proximately to the vapor deposition substrate dome (17) and having opposite end parts connected with a second high frequency power supply (25). According to the arrangement, a desired vapor deposition film can be formed well and uniformly on the vapor deposition substrate.</p>
申请公布号 WO2003012160(P1) 申请公布日期 2003.02.13
申请号 JP2001006601 申请日期 2001.07.31
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