发明名称 METHOD AND COMPOSITION FOR THE REMOVAL OF RESIDUAL MATERIALS DURING SUBSTRATE PLANARIZATION
摘要 A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.
申请公布号 WO0244293(A3) 申请公布日期 2003.02.13
申请号 WO2001US43267 申请日期 2001.11.20
申请人 APPLIED MATERIALS, INC. 发明人 SUN, LIZHONG;TSAI, STAN;LI, SHIJIAN
分类号 B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/306;H01L21/321 主分类号 B24B37/00
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