发明名称 |
NAND-type flash memory device and method of forming the same |
摘要 |
A NAND-type flash memory device for preventing punchthrough and a method for forming the same are provided. The NAND-type flash memory device includes a string selection transistor, a plurality of cell memory transistors, and a ground selection transistor being sequentially connected in series. The device further includes a bitline contact connected to a drain region of the string selection transistor, and a common source line connected to a source region of the ground selection transistor. Impurities are heavily doped to a drain-to-channel interface in the string selection transistor and a channel-to-source interface in the ground selection transistor, forming pockets for preventing punchthrough. The pockets are preferably formed using a tilted ion implantation using the vertical gate structures as masks.
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申请公布号 |
US2003032245(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020272972 |
申请日期 |
2002.10.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
YIM YONG-SIK;CHOI JUNG-DAL |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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