发明名称 |
Lithographic apparatus, device manufacturing methods, devices manufactured thereby, method of manufacturing a reflector, reflector manufactured thereby and phase shift mask |
摘要 |
A reflector for EUV has additional multi-layers on the front surface of a base multilayer stack provided selectively to compensate for figure errors in the base multilayer stack or the substrate on which the multilayer stack is provided. A reflective mask for EUV uses two multilayer stacks, one introducing a relative phase shift and/or altered reflectivity with respect to the other one.
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申请公布号 |
US2003031938(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020147309 |
申请日期 |
2002.05.17 |
申请人 |
SINGH MANDEEP;BRAAT JOSEPHUS JOHANNES MARIA |
发明人 |
SINGH MANDEEP;BRAAT JOSEPHUS JOHANNES MARIA |
分类号 |
G21K1/06;G02B5/08;G03F1/00;G03F7/20;G21K5/02;H01L21/027;(IPC1-7):G03F9/00;G21K5/00;G03B27/42;G03C5/00 |
主分类号 |
G21K1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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