发明名称 Method for forming a passivation layer for organic light-emitting devices
摘要 A method for fabricating an organic light-emitting device comprises in turn the steps of: providing a substrate; forming a first electrode corresponding to a light emission area; forming a stripe-shaped photoresist layer on the substrate having the first electrode wherein the photoresist layer is above the substrate having the first electrode; depositing an organic light-emitting medium layer on the first electrode in the exposed areas between the stripe-shaped photoresist layers to form a plurality of first electrode areas including the organic light-emitting medium layer on the first electrode; forming a second electrode on the organic light-emitting medium; forming a stress-relief layer on the second electrode wherein the stress-relief layer is a thin film of silicon oxynitride or polymer; and forming a passivation layer on the stress-relief layer wherein the passivation layer is an amorphous silicon, an inorganic nitride or an inorganic oxide.
申请公布号 US2003030369(A1) 申请公布日期 2003.02.13
申请号 US20020212162 申请日期 2002.08.06
申请人 RITDISPLAY CO., 发明人 SHIH AN;JOU CHORNG-SHYR
分类号 H01L27/32;H01L51/52;(IPC1-7):H01J33/00;H01J1/62 主分类号 H01L27/32
代理机构 代理人
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