发明名称 |
Structure of semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device and a method for manufacturing the same are provided. The structure of a semiconductor device includes gate electrodes having a T-shaped structure comprised of first and second gate electrodes having low gate resistance and low parasitic capacitance and a halo ion-implanted region in which a short channel effect can be effectively suppressed. The method for manufacturing the device is capable of performing high angle ion implantation without extending gate-to-gate space.
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申请公布号 |
US2003030103(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020144962 |
申请日期 |
2002.05.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYU HYUK-JU;AHN JONG-HYON |
分类号 |
H01L29/423;H01L21/265;H01L21/28;H01L21/336;H01L21/8234;H01L29/49;H01L29/78;H04B7/26;H04H1/02;H04N7/08;H04N7/081;H04N7/173;H04W4/06;H04W4/18;H04W88/02;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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