发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
There can be provided a semiconductor device having a rough surface to provide an increased capacitance of a capacitor and enhanced prevention of short-circuit between capacitors, and a method of manufacturing the same. The semiconductor device includes a plug interconnection penetrating an insulating film and connected to an underlying wiring, and a storage node having a lower portion overlying the insulating film and free of a rough surface, and connected to the plug interconnection, and an upper portion overlying the lower portion of the storage node without covering a side surface of the lower portion of the storage node, and having a rough surface.
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申请公布号 |
US2003030095(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020271580 |
申请日期 |
2002.10.17 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJIISHI YOSHITAKA;TANAKA YOSHINORI;HASUNUMA EIJI |
分类号 |
H01L21/8242;H01L21/02;H01L27/108;(IPC1-7):H01L21/824;H01L29/76;H01L31/119 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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