| 摘要 |
In accordance with the present invention, the gate length and the gate insulation film thickness are different between the p-channel MOS field effect transistors serving as the driver gates and the n-channel MOS field effect transistors forming the flip flop. Namely, the p-channel MOS field effect transistors serving as the driver gates have a larger gate length and a smaller gate oxide film thickness than the n-channel MOS field effect transistors forming the flip flop.
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