发明名称 |
Method for forming large integration and ultra-fine lines on a substrate |
摘要 |
A method for forming ultra-fine width lines on a substrate avoids occurrence of overetch/underetch defects in the many etching steps, as solder layer or copper film etching steps. With the present method the line shape is able to be achieved close to an ideal shape, so that the quality of the lines is high and the integration of the substrate is also high.
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申请公布号 |
US2003029832(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20010927515 |
申请日期 |
2001.08.13 |
申请人 |
COMPEQ MANUFACTURING COMPANY LIMITED |
发明人 |
LIN TING-HAO |
分类号 |
H01L21/3213;H05K3/06;H05K3/10;(IPC1-7):H01L21/321 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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