| 摘要 |
The generation of leakage currents between gate electrodes can be minimized while maintaining the dimensional accuracy and height of the gate electrodes. For example by lamp heating, an oxide film (7) is formed on gate electrodes (4) having a nitride film (8) on their upper surfaces. Thus, even if silicon dust particles are redeposited in between the gate electrodes 4 in a subsequent cleaning process, the generation of leakage currents between the electrodes can be minimized in semiconductor devices. The oxide film (7) is formed only on the side surfaces of the gate electrodes (4), which prevents a decrease in the film thickness in the upper surfaces of the gate electrodes (4) during the process of forming the oxide film (7). Further, there is no need to thicken a gate electrode material film (3) beforehand in order to maintain the height of the gate electrodes (4), which minimizes degradation in dimensional accuracy of the gate electrodes (4).
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