发明名称 |
SPUTTERING TARGET, PHASE SHIFT MASK BLANK USING THE SPUTTERING TARGET AND METHOD OF MANUFACTURING PHASE SHIFT MASK |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a sputtering target which is used for forming photosemipermeable sections of a phase shift mask and contains at least metal and borosilicate glass. SOLUTION: In manufacturing a phase shift film by a sputtering method, the sputtering target containing the borosilicate glass is used as the sputtering target, by which the phase shift mask blank and phase shift mask having the photosemitransmissive film (phase shift film) surpassed in chemical resistance are provided.</p> |
申请公布号 |
JP2003043668(A) |
申请公布日期 |
2003.02.13 |
申请号 |
JP20010236796 |
申请日期 |
2001.08.03 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
SHINAGAWA TSUTOMU;OKAZAKI SATOSHI;INAZUKI SADAOMI;KANEKO HIDEO;WATANABE MASATAKA |
分类号 |
C23C14/34;G03F1/32;G03F1/54;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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