| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid for metal, which can be used for a chemical polishing method used for manufacturing a semiconductor circuit, is composed of various sorts of safe additives having little environmental load, and can inhibit dishing in a metal wiring, particularly a copper-based metal wiring, or corrosion during polishing. SOLUTION: The polishing liquid for metal includes a protective film forming agent for the metal surface which contains particularα-amino acid such as Leucine, phenyl-alanine or the like. The particularα-amino acid prevents elution of the above metal, by adsorbing on the surface of the metal for the wiring, particularly on the surface of the copper-based metal buried in recess parts of a substrate, or by reacting with the above metal, and forms the protective film on the above metal surface. Furthermore, the agent for forming the protective film on the metal surface, a method for polishing the base material surface for manufacturing the substrate for the semiconductor circuit, the substrate for the semiconductor circuit using them, the semiconductor circuit including the same, and a method for manufacturing them, are provided.
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