METHOD OF ARTIFICIAL CREATION OF FORBIDDEN ZONE IN CONDUCTOR MATERIALS
摘要
Method of artificial creation forbidden zone in conductor materials and the keeping back valency electrons in conductor materials zone. The possible power states of electron, which is moving in limited part of space.
申请公布号
WO03012875(A1)
申请公布日期
2003.02.13
申请号
WO2001PL00067
申请日期
2001.08.02
申请人
KAZHAYEU, ULADZIMIR;KUBIK, ADAM;KORDECKI, KAZIMIERZ
发明人
KAZHAYEU, ULADZIMIR;KUBIK, ADAM;KORDECKI, KAZIMIERZ
