| 摘要 |
A semiconductor device made of silicon carbide is provided. In the case of a silicon carbide Schottky barrier diode, for example, a p-type region (104) is provided on the side of a cathode electrode (103) serving as an ohmic electrode. The provision of the p-type region allows carriers to be injected from the p-type region in opposition to a reverse current between an anode and the cathode at switch-off and to recombine with carriers carrying the reverse current. That is, a change in the number of carriers is suppressed in an n-type region during a switching operation. This suppresses variations in resistance component and capacitance component. Consequently, the semiconductor device is less prone to oscillations in voltage and current during the switching operation. In the case of a silicon carbide MESFET, the provision of the p-type region on a source electrode side produces similar effects.
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