发明名称 |
Fabrication of semiconductor interconnect structures |
摘要 |
A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.
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申请公布号 |
US2003032373(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020264726 |
申请日期 |
2002.10.03 |
申请人 |
BASOL BULENT M.;TALIEH HOMAYOUN |
发明人 |
BASOL BULENT M.;TALIEH HOMAYOUN |
分类号 |
B24B37/04;B24B49/16;H01L21/00;H01L21/687;(IPC1-7):B24B1/00;B24B7/19 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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