发明名称 Current mirror and differential amplifier for providing large current ratio and high output impedance
摘要 A current mirror for providing a large current ratio and a high output impedance even in radio frequency operation and a differential amplifier including the same are provided. The current mirror includes a current source for supplying a reference current, a reference transistor, an output transistor, and a proportional-to-absolute temperature (PTAT) voltage generator. The current source has a first terminal connected to a first reference voltage and a second terminal. The reference transistor has a control electrode, a first current carrying electrode connected to the second terminal of the current source, and a second current carrying electrode connected to a second reference voltage. The output transistor has a control electrode, a first current carrying electrode connected to an output terminal to which a mirrored current flows, and a second current carrying electrode connected to the second reference voltage. The PTAT voltage generator is connected between the control electrode of the reference transistor and the control electrode of the output transistor, for increasing the voltage of the control electrode of the reference transistor to a predetermined voltage and supplying the increased voltage to the control electrode of the output transistor.
申请公布号 US2003030492(A1) 申请公布日期 2003.02.13
申请号 US20020133777 申请日期 2002.04.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HYUN-SEOK
分类号 G05F3/26;H03F1/30;H03F3/45;(IPC1-7):H03F3/45 主分类号 G05F3/26
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