发明名称 |
Semiconductor arrangement for switching inductive loads such as motor, has Schottky diode that is formed by Schottky contact between source electrode and drift zone of semiconductor surface |
摘要 |
The arrangement has a gate electrode (40) arranged in a trench extending in vertical direction of semiconductor surface (100). The gate electrode is insulated from the semiconductor surface and a source electrode (60). A Schottky diode connected in parallel with a drain-source path of the MOS transistor, is formed by the Schottky contact between source electrode and drift zone (12) of semiconductor surface. |
申请公布号 |
DE10124115(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
DE2001124115 |
申请日期 |
2001.05.17 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
WERNER, WOLFGANG;HIRLER, FRANZ |
分类号 |
H01L27/07;H01L29/417;H01L29/423;H01L29/78 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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