SEMICONDUCTOR FABRICATION DEVICE AND SEMICONDUCTOR FABRICATION METHOD,申请号WO2002JP07821-传众专利搜索

发明名称	SEMICONDUCTOR FABRICATION DEVICE AND SEMICONDUCTOR FABRICATION METHOD
摘要	Annealing is performed after forming a seed film by a physical vapor deposition (PVD) method in order to satisfactorily form a seed film and a wiring metal thin film that constitute a dual damascene structure in a semiconductor device, and then a wiring metal thin film is formed by an electrochemical plating (ECP) method&period; A PVD system provided with a quick−heat−treating anneal chamber and an ECP system provided with a quick−heat−treating anneal chamber are provided for the above purposes&period;
申请公布号	WO03012845(A1)	申请公布日期	2003.02.13
申请号	WO2002JP07821	申请日期	2002.07.31
申请人	APPLIED MATERIALS, INC.;DIEHL, DANIEL LEE;OWADA, NOBUO;TOGASHI, YUKI;MIYAMOTO, KEIJI;AITANI, TERUKAZU;GOTO, KYOJI	发明人	DIEHL, DANIEL LEE;OWADA, NOBUO;TOGASHI, YUKI;MIYAMOTO, KEIJI;AITANI, TERUKAZU;GOTO, KYOJI
分类号	C23C14/56;C23C14/58;C23C18/16;C25D7/12;H01L21/285;H01L21/288;H01L21/768;(IPC1-7):H01L21/285;H01L21/320;C23C18/38	主分类号	C23C14/56
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