MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a technology for forming a composite oxide film, superior in resistance to metal stain and corrosion resistance to fluorinated acid and hydrochloric acid, on the surface of a member for a semiconductor manufacturing apparatus. SOLUTION: This manufacturing method includes forming the composite oxide film, by applying a slurry of silicon oxide-aluminum oxide-chromium oxide and a sintering additive which generates an amorphous inorganic material when baked, on a surface of a substrate, and by heating and baking it at 250-750 deg.C. The method also includes forming a precipitated layer of amorphous inorganic fine particles, by using a chromic acid aqueous solution containing the sintering additive.