| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that a crystal grain orientation of a zinc oxide film doped in a high concentration, generally, deteriorates. SOLUTION: A method for manufacturing the zinc oxide thin film doped with indium of a dopant by sputtering, comprises performing an initial film formation in the manufacturing process, then extinguishing plasma in the state of keeping a substrate temperature to stop the film formation, and starting the film formation again to achieve the film into a desired thickness. The downtime setting in the middle of the film formation stabilizes a surface structure of the thin film, to form the zinc oxide film having highly oriented crystal axis, which is doped with high concentration of indium.
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