发明名称 Semiconductor device having self-aligned contact pads and method for manufacturing the same
摘要 A semiconductor device having self-aligned contact pads and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate and an isolation layer formed on the semiconductor substrate. The semiconductor substrate defines a plurality of active regions that each have a major axis and a minor axis. A plurality of gates are formed to cross the plurality of active regions and extend in the direction of the minor axis. First and second source/drain regions are formed in active regions at either side of each of the gates. First and second self-aligned contact pads (SACs) are formed to contact the top surfaces of the first and second source/drain regions, respectively.
申请公布号 US2003032219(A1) 申请公布日期 2003.02.13
申请号 US20020087063 申请日期 2002.03.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NAM DONG-SEOK;KIM JI-SOO;CHAE YUN-SOOK
分类号 H01L21/768;H01L21/28;H01L21/60;H01L21/8234;H01L27/088;H01L27/10;(IPC1-7):H01L21/82;H01L21/336 主分类号 H01L21/768
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