发明名称 |
Semiconductor device having self-aligned contact pads and method for manufacturing the same |
摘要 |
A semiconductor device having self-aligned contact pads and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate and an isolation layer formed on the semiconductor substrate. The semiconductor substrate defines a plurality of active regions that each have a major axis and a minor axis. A plurality of gates are formed to cross the plurality of active regions and extend in the direction of the minor axis. First and second source/drain regions are formed in active regions at either side of each of the gates. First and second self-aligned contact pads (SACs) are formed to contact the top surfaces of the first and second source/drain regions, respectively.
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申请公布号 |
US2003032219(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020087063 |
申请日期 |
2002.03.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM DONG-SEOK;KIM JI-SOO;CHAE YUN-SOOK |
分类号 |
H01L21/768;H01L21/28;H01L21/60;H01L21/8234;H01L27/088;H01L27/10;(IPC1-7):H01L21/82;H01L21/336 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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