| 摘要 |
<p>High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline substrate of a semiconductor structure by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (4703) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer (4702) by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. An optical waveguide (4712) is formed in a monocrystalline layer (4706) grown on the semiconductor structure for distributing an optical signal to a selected portion of circuitry formed in the semiconductor structure. An optical source is formed in the semiconductor structure and coupled to the optical waveguide for generating the optical signal. A waveguide interferometer (4708) is formed in a monocrystalline layer of the semiconductor structure and coupled to the opticalwaveguide for switching the optical signal between an 'on' state and an 'off' state. An optical detector is formed in the semiconductor structure and coupled to the waveguide interferometer for converting the optical signal to an electrical signal at the selected portion of circuitry of the semiconductor structure.</p> |
