| 摘要 |
<p>This invention relates to a method of depositing a dielectric film on a substrate surface having metal lines thereon with at least some spacings between 4νm and 20νm including reacting at least one silane containing gas and at least one of oxygen or an oxygen containing gas in a chamber to form a film on the surface of the substrate within the chamber wherein the chamber pressure is below 850mT and wherein spaces between the metal lines are at least substantially filled by the film.</p> |
