| 发明名称 |
Dynamic random access memory trench capacitors |
| 摘要 |
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
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| 申请公布号 |
US2003030091(A1) |
申请公布日期 |
2003.02.13 |
| 申请号 |
US20020218007 |
申请日期 |
2002.08.13 |
| 申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
BULSARA MAYANK;CURRIE MATTHEW T.;LOCHTEFELD ANTHONY J. |
| 分类号 |
H01L21/8242;H01L29/94;(IPC1-7):H01L21/824;H01L27/108;H01L31/119 |
主分类号 |
H01L21/8242 |
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