发明名称 |
Corrosion resistant coating for semiconductor processing chamber |
摘要 |
Resistance to corrosion in a plasma environment is imparted to components of a semiconductor processing tool by forming a rare earth-containing coating over component surfaces. The plasma-resistant coating may be formed by sputtering rare earth-containing material onto a parent material surface. Subsequent reaction between these deposited materials and the plasma environment creates a plasma-resistant coating. The coating may adhere to the parent material through an intervening adhesion layer, such as a graded subsurface rare earth layer resulting from acceleration of rare earth ions toward the parent material at changed energies prior to formation of the coating.
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申请公布号 |
US2003029563(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20010927244 |
申请日期 |
2001.08.10 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KAUSHAL TONY S.;DAM CHUONG QUANG |
分类号 |
C23C16/44;H01J37/32;(IPC1-7):C23F1/02 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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