发明名称 Corrosion resistant coating for semiconductor processing chamber
摘要 Resistance to corrosion in a plasma environment is imparted to components of a semiconductor processing tool by forming a rare earth-containing coating over component surfaces. The plasma-resistant coating may be formed by sputtering rare earth-containing material onto a parent material surface. Subsequent reaction between these deposited materials and the plasma environment creates a plasma-resistant coating. The coating may adhere to the parent material through an intervening adhesion layer, such as a graded subsurface rare earth layer resulting from acceleration of rare earth ions toward the parent material at changed energies prior to formation of the coating.
申请公布号 US2003029563(A1) 申请公布日期 2003.02.13
申请号 US20010927244 申请日期 2001.08.10
申请人 APPLIED MATERIALS, INC. 发明人 KAUSHAL TONY S.;DAM CHUONG QUANG
分类号 C23C16/44;H01J37/32;(IPC1-7):C23F1/02 主分类号 C23C16/44
代理机构 代理人
主权项
地址