发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A transistor of a semiconductor device has an increased driving capacity. The semiconductor device has a first gate insulation film formed by a selective oxidation, a second gate insulation film formed by thermal oxidation and a gate electrode formed across the first and the second gate insulation films. The second gate insulation film is composed of a thicker gate insulation film and a thinner gate insulation film.
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申请公布号 |
US2003032223(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020215188 |
申请日期 |
2002.08.09 |
申请人 |
KIKUCHI SHUICHI;MOMEN MASAAKI |
发明人 |
KIKUCHI SHUICHI;MOMEN MASAAKI |
分类号 |
H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L21/338 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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