| 摘要 |
An integrated circuit comprising a subassembly of solid state devices formed into a substrate made of a semiconducting material. The devices within the subassembly are connected by metal wiring formed from conductive metals. A diffusion barrier layer of an alloy film having the composition of SiwCxOyHz where w has a value of 10 to 33, preferably 18 to 20 atomic %, x has a value of 1 to 66, preferably 18 to 21 atomic percent, y has a value of 1 to 66, preferably 5 to 38 atomic % and z has a value of 0.1 to 60, preferably 25 to 32 atomic %; and w + x + y + z = 100 atomic % is formed on at least the metal wiring. |
